| PART |
Description |
Maker |
| HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES
HSMS-2802 · Low reverse leakage Schottky diode
HSMS-2803 · Low reverse leakage Schottky diode
HSMS-2804 · Low reverse leakage Schottky diode
HSMS-2805 · Low reverse leakage Schottky diode
HSMS-2808 · Low reverse leakage Schottky diode
HSMS-280B · Low reverse leakage Schottky diode
HSMS-280C · Low reverse leakage Schottky diode
HSMS-280E · Low reverse leakage Schottky diode
HSMS-280F · Low reverse leakage Schottky diode
HSMS-280K · Low reverse leakage Schottky diode
HSMS-280L · Low reverse leakage Schottky diode
HSMS-280M · Low reverse leakage Schottky diode
HSMS-280N · Low reverse leakage Schottky diode
HSMS-280R · Low reverse leakage Schottky diode
|
http://
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| BAS70DW-04 BAS70DW-06-TP BAS70TW BAS70DW-05 |
200mW SCHOTTKY BARRIER Diode
DIODE SCHOTTKY 200MW 70V SOT363 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| 20TQ040S 20TQ035S 20TQ045S 20TQ040 20TQ035STRR 20T |
40V 20A Schottky Discrete Diode in a TO-220AC package
45V 20A Schottky Discrete Diode in a D2-Pak package
35V 20A Schottky Discrete Diode in a D2-Pak package
COG Technology, 128 x 64 pixel format
SCHOTTKY RECTIFIER
40V 20A Schottky Discrete Diode in a D2-Pak package
45V 20A Schottky Discrete Diode in a TO-220AC package
|
IRF[International Rectifier]
|
| CMPSH05-4 |
SMD Schottky Diode Single
SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| NTLJF3118N NTLJF3118NTAG NTLJF3118NTBG |
Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
|
ON Semiconductor
|
| BAT60A Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管（肖特基二极管整流极端VF为移动通信电源供应下降
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAS40-04-GS18 BAS40-04-V-G-18 BAS40-00-V-G-18 |
Diode Small Signal Schottky 40V 0.2A 3-Pin SOT-23 T/R
SCHOTTKY DIODE SOT23-E3-G
|
Vishay Semiconductors
|
| 151CMQ 151CMQ050 151CMQ035 151CMQ040 151CMQ045 |
DIODE 150 A, 50 V, SILICON, RECTIFIER DIODE, TO-249AA, D-60, MODIFIED TO-249AA, 9 PIN, Rectifier Diode
SCHOTTKY RECTIFIER
35V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package
40V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package
45V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package
|
Vishay Semiconductors
IRF[International Rectifier]
|
